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BUD600 Datasheet, PDF (1/9 Pages) TEMIC Semiconductors – Silicon NPN Hugh Voltage Switching Transistor
BUD600
Silicon NPN High Voltage Switching Transistor
Features
D Simple-sWitch-Off Transistor (SWOT)
D HIGH SPEED technology
D Planar passivation
D 100 kHz switching rate
D Very low switching losses
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
D Very low dynamic saturation
D Very low operating temperature
D Optimized RBSOA
D High reverse voltage
2
123
94 8964
BUD600
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings
Tcase = 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
Test Conditions
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
Tcase ≤ 60°C
TELEFUNKEN Semiconductors
Rev. B2, 18-Jul-97
1
3
94 8965
BUD600 –SMD
1 Base 2 Collector 3 Emitter
Symbol
Value
Unit
VCEO
250
V
VCEW
300
V
VCES
600
V
VEBO
11
V
IC
2
A
ICM
3
A
IB
0.75
A
IBM
1
A
Ptot
12
W
Tj
150
°C
Tstg
–65 to +150
°C
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