U3810BM Datasheet, PDF (21/31 Pages) TEMIC Semiconductors – Multi Standard Feature Phone Integrated Circuit

TELEFUNKEN Semiconductors
U3810BM
Parameters
Test conditions
Min. Typ. Max. Unit Fig.
Ringer
THA threshold voltage
THTV
THA hysteresis DTH
V_S = 5 V
V_S = 5 V
S5 on 1
S5 on 1
8.30 8.75 9.20 V 10
435 465 495 mV 10
VSA threshold voltage
VSAON (ring detector en-
abled)
VTHA = 12 V
S5 on 1
3.0
3.2
3.4 V 10
VSA threshold voltage
VTHA = 12 V
VSAOFF (ring detector dis-
abled)
S5 on 1
2.45 2.5 2.65 V 10
Switching supply output
current
VS = 5 V VIN = 30 V
S7 on 1
S5 on 1 RIN = 300 kW
33
37
mA 10
Input impedance VIN/IIN
RPI
ringing power information
S5 on 1
VS = 5 V S7 on 1
Off state VIN = 5 V RIN = 300 kW
On state VIN = 30 V RIN = 300 kW
On state VIN = 30 V RIN = 1500 kW
RIN = 300 kW S7 on 2
S5 on 2 VIN = 30 V VESI = 0 V
S5 on 1 VIN = 0 V VESI = 5 V
50.0
kW 10
ă2.78 2.90 3.05 kW
13.4 14.1 15.0 kW
1.48 1.55 1.64 V 10
1.57 1.61 1.64 V
VSA/VDD switch off VSA- S8 closed
OFF1
S5 on 1
(measured on VSA)
IVDD = – 1 mA
5.55 5.8
6.0
V 10
VSA shunt regulator
VSAL
VSAH
S5 on 3
ISA = 2 mA
ISA = 45 mA
4.75 5.0 5.15 V 10
5.0
5.3
5.7 V
Difference between
max. VSA voltage and
cut off voltage
VSADIFF = VSAOFF1 – VSAH
250 500
mV 10
ZCO
VS = 5 V S5 on 1 S6 closed
Zero crossing information IZCO = 100 mA
VTHA = 7.5 V
IZCO = –100 mA
VTHA = 12.0 V 4.4
0.5 V 10
V
Ringer output power
(on 100 W load)
VIN = 30 V
RIN = 300 kW
S7 on 2
S5 on 2
SIN1 SIN0 LIS EA
0111
70
105 130 mW 10
NEA – maximum gain
Extra ringing attenuation VIN = 30 V
RIN = 300 kW
S7 on 2 S5 on 2
SIN1 SIN0 LIS AMF EA
01111
– 12.8 – 12.2 – 11.6 dB 10
NEA – maximum gain
Rev. A1: 19.01.1996
21 (31)