U4092B Datasheet, PDF (15/32 Pages) TEMIC Semiconductors – Monolithic Integrated Feature Phone Circuit

TELEFUNKEN Semiconductors
U4092B
Parameters
Test conditions / Pin Symbol Min. Typ. Max.
Gain at low operating current I_L = 10 mA
I_MP = 1 mA
G_T
40
42.5
RDC = 68 kW
Vmic = 1 mV
I_M = 300 mA
Distortion at low operating I_L = 10 mA
current
I_M = 300 mA
d_t
5
I_MP = 1 mA
RDC = 68 kW
Vmic = 10 mV
Line loss compensation
Mute suppression
a) MIC muted (microphone
preamplifier
I_L = 100 mA,
w ^{RAGA = 20 kW}
I_L 14 mA
Mutx = open
DG_TI
G_TM
– 6.4 – 5.8 – 5.2
60
80
b) TXA muted (second
stage)
IMPSEL = open
G_TTX
60
w ^{Receiving amplifier, IL = 14 mA, RGR = 62 k, unless otherwise specified, VGEN = 300 mV}
Adjustment range of receiv- I_L 14 mA, single
G_R
–8
+2
ing gain
ended
Receiving amplification
RGR = 62 kW
G_R
– 7.75 – 7 – 6.25
w ^{RGR = 22 kW}
Amplification of DTMF sig- I_L 14 mA
1.5
G_RM
1
4
7
nal from DTMF IN to RECO V_MUTX = V_MP
Frequency response
I_L > 14 mA,
DG_RF
" 0.5
f = 300 to 3400 Hz
Gain change with current
I_L = 14 to 100 mA
DG_R
Gain deviation
Ear protection
w ^{Tamb = –10 to +60°C}
I_L 14 mA
DG_R
EP
" 0.5
" 0.5
1.1
MUTE suppression
w ^{VGEN = 11 Vrms}
I_L 14 mA
DG_R
60
v ^{DTMF operation}
Output voltage d 2%
V_MUTX = V_MP
I_L = 14 mA
Z_ear = 68 nF
0.5
v^{Maximum output current}
d 2%
Z_ear = 100 W
4
w ^{Receiving noise}
Z_ear = 68 nF + 100 W
psophometrically weigthed I_L 14 mA
ni
Output resistance
Output against GND
Ro
– 80 – 77
10
Line loss compensation
RAGA = 20 kW,
I_L = 100 mA
DG_RI
– 7.0 – 6.0 – 5.0
Unit
dB
%
dB
dB
dB
dB
dB
dB
dB
dB
dB
Vrms
dB
Vrms
mA
(peak)
dBmp
W
dB
Figure
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Rev. A1: 24.01.1995
Preliminary Information
15