U4092B Datasheet, PDF (14/32 Pages) TEMIC Semiconductors – Monolithic Integrated Feature Phone Circuit

U4092
TELEFUNKEN Semiconductors
Absolute maximum ratings
Parameters
Line current
DC line voltage
Maximum input current Pin 17
Junction temperature
Ambient temperature
Storage temperature
Total power dissipation, T_amb = 60°C
Thermal resistance
Symbol
Value
Unit
I_L
140
mA
V_L
12
V
I_RING
15
mA
T_j
125
°C
T_amb
– 25 to + 75
°C
T_stg
– 55 to + 150
°C
P_tot
1
W
Parameters
Junction ambient SDIP 40
Symbol
R_thJA
Value
50
Unit
K/W
Electrical characteristics
f = 1 kHz, 0
Z_ear = 68 nF
d+B1m00=_W7,7Z5_Mm=V_r6m8s,nIF_{M, p=in03.31mopAe,nI,MVPIM}=_P2_SEm_LA=,
RDC = 130 kW, T_amb =
GND, V_MUTX = GND,
25°C,
unless
RGSA = 560 kW,
otherwise specified.
Parameters
Test conditions / Pin Symbol Min. Typ. Max.
DC characteristics
DC voltage drop over circuit I_L = 2 mA
V_L
2.4
I_L = 14 mA
4.6
5.0
5.4
I_L = 60 mA
7.5
I_L = 100 mA
8.8
9.4
10.0
Transmission amplifier, I_L = 14 mA, V_MIC = 2 mV, RGT = 27 kW, unless otherwise specified
Adjustment range of transmit
G_T
40
45
50
gain
Transmitting amplification
Frequency response
RGT = 12 kW
w ^{RGT = 27 kW}
I_L 14 mA,
47
48
49
G_T
39.8
DG_T
"41.8
0.5
f = 300 to 3400 Hz
Gain change with current
Pin 31 open
DG_T
" 0.5
Gain deviation
I_L = 14 to 100 mA
T_amb = – 10 to + 60°C
DG_T
" 0.5
CMRR of microphone
CMRR
60
80
amplifier
Input resistance of MIC
amplifier
RGT = 12 kW
RGT = 27 kW
R_i
50
45
75
110
Distortion at line
Maximum output voltage
I_L > 14 mA
V_L = 700 mVrms
I_L > 19 mA
d < 5%
Vmic = 25 mV
CTXA = 1 mF
d_t
2
V_Lmax
1.8
3
4.2
Noise at line psophomet-
I_L > 14 mA
no
rically weighted
G_T = 48 dB
Anti-clipping attack time
CTXA = 1 mF
release time
each 3 dB overdrive
– 80 –72
0.5
9
Unit
V
dB
dB
dB
dB
dB
dB
kW
%
dBm
dBmp
ms
Figure
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Preliminary Information
Rev. A1: 24.01.1995