PHT64020B Datasheet, PDF (1/2 Pages) Teledyne Technologies Incorporated – Up to 6 GHz Linear Power Silicon Bipolar Transistor

Up to 6 GHz Linear Power
Silicon Bipolar Transistor
Description
The PHT-64020B is a high performance NPN bipolar
transistor. The PHT-64020B is housed in a hermetic
200 mil BeO disk package. It is designed for use in
medium power, wide band amplifier and oscillator
applications.
TMS is not the original device manufacturer.
TMS procures commercial off the shelf product
and UpScreens per the following process flow. For
custom screening requirements, Quality Conformance
Inspection, or additional electrical selection, please
contact TMS.
PHT-64020B
200 mil BeO Package Dimensions
Technical Data
PHT-64020B Suggested Maximum Ratings
Parameter
Suggested Maximum [1]
Emitter-Base Voltage
2.0V
Collector-Base Voltage
40V
Collector-Emitter Voltage
20V
Collector Current
200mA
Junction Temperature
+200°C
Storage Temperature
-65 to +200°C
NOTE:
1. Permanent damage may occur if any of these limits are exceeded
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Specifications subject to change without notice.
PHT-64020B