TC4467 Datasheet, PDF (5/9 Pages) TelCom Semiconductor, Inc – LOGIC-INPUT CMOS QUAD DRIVERS

LOGIC-INPUT CMOS
QUAD DRIVERS
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TC4467
TC4468
TC4469
Transition power dissipation arises in the
Maximum operating temperature:
complementary configuration (TC446X) because the
output stage N-channel and P-channel MOS transistors
T_J – θ_JA (P_D) = 141°C,
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are ON simultaneously for a very short period when the
output changes. The transition power dissipation is
approximately:
where: T_J = Maximum allowable junction temperature
(+150°C)
P_T = f V_S (10 ϫ 10^–9).
θ_JA = Junction-to-ambient thermal resistance
(83.3°C/W) 14-pin plastic package.
Package power dissipation is the sum of load, quies-
cent and transition power dissipations. An example shows
NOTE: Ambient operating temperature should not exceed +85°C for
"EJD" device or +125°C for "MJD" device.
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the relative magnitude for each term:
C = 1000 pF capacitive load
V_S = 15V
D = 50%
f = 200 kHz
P_D = Package Power Dissipation = P_L + P_Q + P_T
= 45 mW + 35 mW + 30 mW = 110 mW.
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VDD
1 µF FILM
0.1 µF CERAMIC
1A ¹
1B ²
2A ³
2B ⁴
3A ⁵
3B ⁶
14
13
VOUT
470 pF
12
11
+5V
INPUT
(A, B)
0V
10%
VDD
OUTPUT
90%
tD1
t_R
90%
90%
tD2
tF
5
4A ⁸
4B ⁹
10
7
0V
10%
10%
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Input: 100 kHz, square wave,
t_RISE = t_FALL ≤ 10nsec
Figure 1. Switching Time Test Circuit
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TELCOM SEMICONDUCTOR, INC.
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4-265