TC4467 Datasheet, PDF (2/9 Pages) TelCom Semiconductor, Inc – LOGIC-INPUT CMOS QUAD DRIVERS

TC4467
TC4468
TC4469
LOGIC-INPUT CMOS
QUAD DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ......................... (GND – 5V) to (V_DD + 0.3V)
Maximum Chip Temperature
Operating ........................................................ +150°C
Storage ............................................. – 65° to +150°C
Maximum Lead Temperature
(Soldering, 10 sec) ......................................... +300°C
Operating Ambient Temperature Range
C Device .................................................. 0° to +70°C
E Device ............................................. – 40° to +85°C
M Device ........................................... – 55° to +125°C
Package Power Dissipation (T_A ≤ 70°C)
14-Pin CerDIP ................................................840mW
14-Pin Plastic DIP ...........................................800mW
16-Pin Wide SOIC ..........................................760mW
Package Thermal Resistance
14-Pin CerDIP
14-Pin Plastic DIP
16-Pin Wide SOIC
R_θJ-A ...................................... 100°C/W
R_θJ-C ......................................... 23°C/W
R_θJ-A ......................................... 80°C/W
R_θJ-C ......................................... 35°C/W
R_θJ-A ......................................... 95°C/W
R_θJ-C ......................................... 28°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS: Measured at T_A = +25°C with 4.5V ≤ V_DD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Input
V_IH
V_IL
I_IN
Output
V_OH
V_OL
R_O
I_PK
I_DC
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Continuous Output Current
I
Latch-Up Protection
Withstand Reverse Current
Switching Time
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
I_S
Power Supply Current
V_DD
Power Supply Voltage
Note 3
Note 3
0V ≤ V_IN ≤ V_DD
I_LOAD = 100µA (Note 1)
I_LOAD = 10mA (Note 1)
I_OUT = 10mA, V_DD = 18V
Single Output
Total Package
4.5V ≤ V_DD ≤ 16V
Figure 1
Figure 1
Figure 1
Figure 1
Note 2
2.4
—
0
—
–1
—
V_DD – 0.025 —
—
—
—
10
—
1.2
—
—
500
—
V_DD
V
0.8
V
1
µA
—
V
0.15
V
15
Ω
—
A
300
mA
500
—
mA
—
15
25
nsec
—
15
25
nsec
—
40
75
nsec
—
40
75
nsec
—
1.5
4
mA
4.5
—
18
V
TRUTH TABLE
Part No.
INPUTS A
INPUTS B
OUTPUTS TC446X
H = High L = Low
4-262
TC4467 NAND
H
H
L
L
H
L
H
L
L
H
H
H
TC4468 AND
H
H
LL
H
L
HL
H
L
LL
TC4469 AND/INV
H
H
LL
H
L
HL
L
H
LL
TELCOM SEMICONDUCTOR, INC.