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TC1426 Datasheet, PDF (5/6 Pages) TelCom Semiconductor, Inc – 1.2A DUAL HIGH-SPEED MOSFET DRIVERS
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1.2A DUAL HIGH-SPEED MOSFET DRIVERS
1
TC1426
TC1427
TC1428
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
550
TA = +25°C
440
Fall Time vs. Supply Voltage
330
TA = +25°C
264
2
Delay Time vs. Supply Voltage
80
CL = 1000pF
TA = +25°C
70
330
10,000pF
220
4700pF
110
2200pF
0
5
7
9
11
13
15
VDD (V)
Rise and Fall Times vs. Temperature
40
CL = 1000pF
VDD = +15V
32
tRISE
24
tFALL
16
8
198
10,000pF
60
132
50
4700pF
tD1
66
2200pF
40
tD2
05
7
9
11
13
15
30
5
7
9
11
13 15
VDD (V)
VDD (V)
Delay Time vs. Temperature
60
CL = 1000pF
VDD = +15V
54
tD2
48
42
tD1
36
Supply Current vs. Capacitive Load
30
CL = 1000pF
VDD = 15V
24 TA = +25°C
500kHz
18
200kHz
12
20kHz
6
3
4
5
0
25 45 65
85 105 125
TEMPERATURE (°C)
0
25 45 65 85 105 125
TEMPERATURE (°C)
0
100
520 940 1360 1780 2200
CAPACITIVE LOAD (pF)
6
Rise Time vs. Capacitive Load
Fall Time vs. Capacitive Load
Supply Current vs. Frequency
1000
TA = +25°C
5 VDD
100
10 VDD
1000
TA = +25°C
5VDD
100
10VDD
100
CL = 1000pF
80 TA = +25°C
VDD = 15V
VDD = 10V
60
40
7
15 VDD
15VDD
20
10
100
10
0
1000
10,000
100
1000
10,000
10
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
TELCOM SEMICONDUCTOR, INC.
VDD = 5V
100
1000
FREQUENCY (kHz)
10,000
8
4-211
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