TC4431 Datasheet, PDF (4/4 Pages) TelCom Semiconductor, Inc – 1.5A HIGH-SPEED 30V MOSFET DRIVERS

1.5A HIGH-SPEED 30V MOSFET DRIVERS
TC4431
TC4431
INPUT ²
VDD= 30V
4.7 µF
1, 8
7
6
0.1 µF
OUTPUT
CL = 1000 pF
+5V
INPUT
90%
10%
0V
tD1 _tF
tD2
VDD
90%
OUTPUT
10%
0V
Inverting Driver
tR
90%
10%
3
LOCK DIS.
4, 5
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10nsec
+5V
INPUT
0V
VDD
OUTPUT
0V
10%
tD1 ^90%
tR
10%
90%
90%
tD2
t_F
10%
Noninverting Driver
Figure 1. Switching Time Test Circuit
TYPICAL CHARACTERISTICS
Supply Current vs. Capacitive Load
60
VDD = 12V
50
2 MHz
40
150
125 ^TF
100
Rise/Fall Time vs. VDD
CLOAD = 1000pf at 25ЊC
4-260
30
20
10
0
100
900 kHz
600 kHz
1000
CLOAD (pF)
200 kHz
20 kHz
10,000
Input Current vs. Input Voltage
50
45
40
35
30
25
20
WITHOUT 1K RES.
15
10
WITH 1K RES.
5
0
3 6 9 12 15 18 21 24 27 30
Input Voltage (VIN)
75
50 _TR
25
0
3 6 9 12 15 18 21 24 27 30
VDD (VOLTS)
TD1 and TD2 Delay vs. VDD
CLOAD = 1000pf at 25ЊC
300
250 ^TD1
200
150
TD2
100
50
0
3 6 9 12 15 18 21 24 27 30
VDD (VOLTS)
TELCOM SEMICONDUCTOR, INC.