TC4431 Datasheet, PDF (2/4 Pages) TelCom Semiconductor, Inc – 1.5A HIGH-SPEED 30V MOSFET DRIVERS

1.5A HIGH-SPEED 30V MOSFET DRIVERS
TC4431
TC4431
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ............................................................36V
Input Voltage (Note 1) ........................ V_DD + 0.3V to GND
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP R_θJ-A ................................................ 150°C/W
CerDIP R_θJ-C .................................................. 50°C/W
PDIP R_θJ-A ................................................... 125°C/W
PDIP R_θJ-C ..................................................... 42°C/W
SOIC R_θJ-A ................................................... 250°C/W
SOIC R_θJ-C ..................................................... 75°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version ........................................... - 40°C to +85°C
Package Power Dissipation (T_A ≤ 70°C )
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ............................................................... 470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: T_A = +25°C with 5.0 ≤ V_DD ≤ 30V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Input
V_IH
V_IL
I_IN
Output
V_OH
V_OL
R_O
I_PK
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current (Note 1)
High Output Voltage
Low Output Voltage
Output Resistance (V_OL)
Peak Output Current
I_REV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 2)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
I_S
Power Supply Current
V_S
Start-up Threshold
V_DO
Drop-out Threshold
0V ≤ V_IN ≤ V_DD (16V MAX)
I_OUT = 100mA
V_DD = 30V, I_O = 10mA
Source: V_DD = 30V
Sink: V_DD = 30V
Duty Cycle ≤ 2%
t ≤ 300 µsec
Figure 1
Figure 1
Figure 1
Figure 1
V_IN = 3V
V_IN = 0V
(Note 3)
2.4
—
—
V
—
—
0.8
V
–1
—
1
µA
V_DD – 1.0 V_DD – 0.8 —
V
—
—
0.025 V
—
7
10
Ω
—
3.0
—
A
—
1.5
—
0.3
—
—
A
—
25
40
nsec
—
33
50
nsec
—
62
80
nsec
—
78
90
nsec
—
2.5
4
mA
—
0.3
0.4
—
8.4
10
V
7
7.7
—
V
4-258
TELCOM SEMICONDUCTOR, INC.