TC96C55 Datasheet, PDF (3/9 Pages) TelCom Semiconductor, Inc – 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR

3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
1
TC96C555
ELECTRICAL CHARACTERISTICS: specifications over operating temperature range unless otherwise
specified 5.0V < V_DD <18V.
2
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
Programmable Current Range
Pin 4 Input Current for I_SOURCE Control (V_REF-V_R1) / R_CHG Fig. 2
5.0
–
100
µA
Pin 1 Input Current for I_SINK Control
(V_REF-V_R2) / R_DIS Fig. 2
5.0
–
100
µA
Reference Section
V_REF
V_DD = 7 to 18V
I_REF = 0 to 1mA
V_DRIFT
TCV_REF
V_R1, V_R2
V_REF-V_R
V_ih
V_il
V_ih to V_il
I_REF
Oscillator
V_DD = 15V
Line Regulation of V_REF
Load Regulation of V_REF
V_REF Drift Over Lifetime
V_REF Tempco
Voltage Pin at 1 and 4
Voltage Across R_CHG and R_DIS
Pin 2, High Switching Threshold
Pin 2, Low Switching Threshold
Delta High to Low Threshold
V_REF Pin 3 Short to GND Pin 5
I_REF = 10µA
– 55 ≤ Temp ≤ 125°C
V_DD = 15V
V_DD = 15V
V_DD = 15V
V_DD = 15V
V_DD = 15V
3.6
–
–
–
–
2.7
0.8
1.75
0.75
0.9
–
4
4.4
0.9
1.5
V
%/V
3
0.1
0.4
%/mA
–
5
%
1100
2000
ppm/°C
3
3.3
V
1
1.2
V
2
2.25
1
1.25
1.0
1.1
V
V
4
V
–
18
mA
Voltage Stability
V_DD = 7V to 18V
–
1
8
%/V
Temperature Stability
– 55 ≤ Temp ≤ 125°C
–
0.4
–
%/°C
Power Supply
I_DD
Power Supply Current
Switching Time¹
0 ≤ V_IN ≤ 3V
–
–
4
5 ^mA
t_R
Rise Time
C1 = 180pF, Fig. 1
–
33
40
nsec
t_F
Fall Time
C1 = 1800pF, Fig. 1
–
30
40
nsec
t_D1
Delay Time
Fg. 1
–
180
220
nsec
t_D2
Delay Time
Fig. 1
–
160
200
nsec
Output
V_OH
V_OL
High Output Voltage
Low Output Voltage
V_DD – 0.025
–
–
6 ^V
–
–
0.025
V
R_O
Output Res Hi State
V_DD = 15V
–
4.5
6
Ω
R_O
Output Res Lo State
V_DD = 15V
–
3.4
6
Ω
I_PK
Peak Output Current
V_DD = 18V
–
2
–
A
NOTE : ¹Switching times guaranteed by design.
The typical values are from 125°C measurements.
Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those
listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the Operational Specifications is not implied. Any exposure to Absolute Maximum Rating
Conditions may affect device reliability.
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TELCOM SEMICONDUCTOR, INC.
8
4-161