TC96C55 Datasheet, PDF (2/9 Pages) TelCom Semiconductor, Inc – 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR

3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
TC96C555
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +20V
Input Voltage, Pin 1 or 4 ................. V_DD +0.3 to GND –0.3
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Package Thermal Resistance
CerDIP R_ΘJ-A ................................................................ 150°C/W
CerDIP R_ΘJ-C ................................................................... 50°C/W
PDIP R_ΘJ-A .................................................................... 125°C/W
PDIP R_ΘJ-C ....................................................................... 42°C/W
SOIC R_ΘJ-A .................................................................... 155°C/W
SOIC R_ΘJ-C ....................................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (T_A ≤ 70°C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
ELECTRICAL CHARACTERISTICS: unless otherwise specified T_A = +25°C with 5V ≤ V_DD ≤ 18V.
Symbol
Parameter
Test Condition
Min
Typ
Max
Programmable Current Range
Pin 4 Input Current for I_SOURCE Control (V_REF - V_R1) / R_CHG Fig. 2 5.0
—
150
Pin 1 Input Current for I_SINK Control
Reference Section
(V_REF - V_R2) / R_DIS Fig. 2
5.0
—
150
V_REF
V_DD = 15V, I_REF = 10µA
3.8
4
4.2
Line Regulation of V_REF
V_DD = 7V to 18V
—
0.6
1
Load Regulation of V_REF
I_REF = 0 to 1mA
—
0.1
0.2
V_DRIFT
V_REF Drift Over Lifetime
—
—
5
TCV_REF
V_REF Tempco
– 55 ≤ Temp ≤ 125°C
—
1100
2000
V_R1, V_R2
Voltage at Pin 1 & 4
2.85
3.0
3.15
V_REF - V_R
Voltage Across R_CHG and R_DIS
0.85
1
1.15
V_ih
Pin 2, High Switching Threshold
V_DD = 15V
1.8
2
2.2
V_il
V_ih - V_il
I_REF
Pin 2, Low Switching Threshold
Delta High to Low Threshold
V_REF Pin 3 Short to GND Pin 5
V_DD = 15V
V_DD = 15V
V_DD = 15V
0.8
1
1.2
0.9
1.0
1.1
—
8
15
ELECTRICAL CHARACTERISTICS: unless otherwise specified T_A = +25°C with 10V ≤ V_DD ≤ 18V:
Unit
µA
µA
V
%/V
%/mA
%
ppm/°C
V
V
V
V
V
mA
Symbol
Parameter
Oscillator
Voltage Stability
Temperature Stability
Power Supply
Power Supply Current
Switching Time¹
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Output
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Res Hi State
R_O
Output Res Lo State
I_PK
Peak Output Current
Test Condition
Min
Typ
V_DD = 7 to 18V
–
1
– 55 ≤ Temp ≤ 125°C
–
0.4
I_DD0 ≤ V_IN ≤ 3V
C1 = 1800pF
C1 = 1800pF
C1 = 1800pF
C1 = 1800pF
–
2
–
23
–
20
–
140
–
100
V_DD = 15V
V_DD = 15V
V_DD = 18V
V_DD – 0.025
–
–
–
–
3.5
–
2.5
–
3
Max
5
–
3
30
30
180
140
–
0.025
5
5
–
Unit
%/V
%/°C
mA
nsec
nsec
nsec
nsec
V
V
Ω
Ω
A
4-160
TELCOM SEMICONDUCTOR, INC.