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TC4626 Datasheet, PDF (3/7 Pages) TelCom Semiconductor, Inc – POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
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POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
1
TC4626
TC4627
ELECTRICAL CHARACTERISTICS: TA = Over Operating Temperature Range VDD = 5V C1 = C2 = C3 10µF
unless otherwise specified.
2
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Driver Input
VIH
Logic 1, Input Voltage
VIL
Logic 0, Input Voltage
IIN
Input Current
Driver Output
VOH
High Output Voltage
VOL
Low Output Voltage
RO
Output Resistance, High
RO
Output Resistance, Low
IPK
Peak Output Current
Switching Time
0V ≤ VIN ≤ VBOOST
2.4
—
—
—
– 10
—
VDRIVE – 0.025 —
—
—
IOUT = 10 mA, VDD = 5V
C & E Version (TA = 70°C or 85°C)
—
15
M Version (TA = 125°C)
—
15
IOUT = 10 mA, VDD = 5V
C & E Version (TA = 70°C or 85°C)
—
10
M Version (TA = 125°C)
—
10
—
1.5
—
0.8
10
—
0.025
20
25
13
15
—
V
V
µA
3
V
V
Ω
4 Ω
A
tR
Rise Time
Test Figure 1,2
tF
Fall Time
Test Figure 1,2
tD1
Delay Time
Test Figure 1,2
tD2
Delay Time
Test Figure 1,2
FMAX
Maximum Switching Frequency Test Figure 1
VDD = 5V, VBOOST > 8.5V
Voltage Booster
—
—
55
nsec
—
—
50
nsec
—
—
60
nsec
—
—
70
nsec
750
—
—
5 kHz
R3
Voltage Boost Output
Source Resistance
R2
Voltage Doubler Output
Source Resistance
FOSC
Oscillator Frequency
VOSC
Oscillator Amplitude
Measured at C1-
UV
@ VBOOST
Undervoltage Threshold
VSTART
@ VBOOST
Start Up Voltage
VBOOST
@VDD = 5V
Power Supply
IDD
Power Supply Current
VDD
Supply Voltage
IL = 10 mA, VDD = 5V
RLOAD = 10kΩ
No Load
VIN = LOW or HIGH
—
400
500
Ω
—
170
300
Ω
5
4.5
—
—
50
10
6 kHz
V
7.0
7.8
8.5
V
10.5
11.3
12
V
14.6
—
—
V
—
—
4
7 mA
4.0
—
6.0
V
TELCOM SEMICONDUCTOR, INC.
8
4-273
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