TC4626 Datasheet, PDF (2/7 Pages) TelCom Semiconductor, Inc – POWER CMOS DRIVERS WITH VOLTAGE TRIPLER

POWER CMOS DRIVERS WITH VOLTAGE TRIPLER
TC4626
TC4627
ABSOLUTE MAXIMUM RATINGS
Package Power Dissipation (T_A ≤ 70°C)
PDIP .................................................................730mW
CerDIP .............................................................. 800mW
SOIC .................................................................760mW
Derating Factor
PDIP ....................................... 5.6 mW/°C Above 36°C
CerDIP ........................................................ 6.0 mW/°C
Supply Voltage ...........................................................6.2V
Input Voltage, Any Terminal ...... V_S + 0.3V to GND – 0.3V
Operating Temperature : M Version ...... – 55°C to +125°C
E Version ......... – 40°C to +85°C
C Version .............. 0°C to +70°C
Maximum Chip Temperature ................................. +150°C
Storage Temperature ............................ – 65°C to +150°C
Lead Temperature (10 sec) ................................... +300°C
ELECTRICAL CHARACTERISTICS: T_A = 25°C VDD = 5V C1 = C2 = C3 10µF unless otherwise specified.
Symbol
Parameter
Driver Input
V_IH
Logic 1, Input Voltage
V_IL
Logic 0, Input Voltage
I_IN
Input Current
Driver Output
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance, High
R_O
Output Resistance, Low
I_PK
Peak Output Current
Switching Time
t_R
t_F
t_D1
t_D2
F_MAX
Rise Time
Fall Time
Delay Time
Delay Time
Maximum Switching Frequency
Voltage Booster
R₃
Voltage Tripler Output
Source Resistance
R₂
Voltage Doubler Output
Source Resistance
F_OSC
V_OSC
Oscillator Frequency
Oscillator Amplitude
Measured at C1-
UV
@ V_BOOST
V_START
@ V_BOOST
Undervoltage Threshold
Start Up Voltage
V_BOOST
@V_DD = 5V
Power Supply
I_DD
Power Supply Current
V_DD
Supply Voltage
Test Conditions
Min
Typ
Max Unit
0V ≤ V_IN ≤ V_DRIVE
2.4
—
—
V
—
—
0.8
V
–1
—
1
µA
I_OUT = 10 mA, V_DD = 5V
I_OUT = 10 mA, V_DD = 5V
V_BOOST – 0.025 —
—
—
—
10
—
8
—
1.5
—
V
0.025
V
15
Ω
10
Ω
—
A
Test Figure 1,2
—
33
40
nsec
Test Figure 1,2
—
27
35
nsec
Test Figure 1,2
—
35
45
nsec
Test Figure 1,2
—
45
55
nsec
Test Figure 1
1.0
—
—
MHz
V_DD = 5V, V_BOOST > 8.5V
I_L = 10 mA, V_DD = 5V
R_LOAD = 10kΩ
No Load
—
300
400
Ω
—
120
200
Ω
12
—
28
kHz
4.5
—
10
V
7.0
7.8
8.5
V
10.5
11.3
12
V
14.6
—
—
V
V_IN = LOW or HIGH
—
—
2.5
mA
4.0
—
6.0
V
4-272
TELCOM SEMICONDUCTOR, INC.