TC4426 Datasheet, PDF (3/6 Pages) TelCom Semiconductor, Inc – 1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS

1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
1
TC4426
TC4427
TC4428
ELECTRICAL CHARACTERISTICS (CONT.): Specifications measured over operating temperature
range with 4.5V ≤ V_DD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Input
V_IH
Logic 1 High Input Voltage
V_IL
Logic 0 Low Input Voltage
I_IN
Input Current
Output
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance
I_PK
Peak Output Current
I_REV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
I_S
Power Supply Current
NOTE: 1. Switching times are guaranteed by design.
0V ≤ V_IN ≤ V_DD
V_DD = 18V, I_O = 10 mA
Duty Cycle ≤ 2%, t ≤ 300µsec
Duty Cycle≤ 2%
t ≤ 300µsec
Figure 1
Figure 1
Figure 1
Figure 1
V_IN = 3V (Both Inputs)
V_IN = 0V (Both Inputs)
2.4
—
—
V
—
—
0.8
V
– 10
—
10
µA
V_DD – 0.025 —
—
V
—
— 0.025 V
—
9
12
Ω
—
1.5
—
A
> 0.5
—
—
A
—
—
40
nsec
—
—
40
nsec
—
—
40
nsec
—
—
60
nsec
—
—
8
mA
—
—
0.6
Crossover Energy Loss
10–8
9
8
7
6
5
4
3
2
INPUT ^2,4
VDD= 18V
4.7 µF
0.1 µF
6
5,7
OUTPUT
CL = 1000 pF
+5V
INPUT
90%
10%
0V
tD1 _tF
tD2
VDD
90%
OUTPUT
10%
0V
Inverting Driver
tR
90%
10%
10–9
46
1600
8 10 12 14 16 18
VDD
Thermal Derating Curves
1400
1200
1000
8 Pin DIP
8 Pin CerDIP
800
8 Pin SOIC
600
400
200
0
0 10 20 30 40 50 60 70 80 90 100 110 120
AMBIENT TEMPERATURE (°C)
3
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10ns
+5V
INPUT
0V
VDD
OUTPUT
0V
10%
90%
tD1
tR
10%
90%
90%
tD2
t_F
10%
Noninverting Driver
Figure 1. Switching Time Test Circuit
NOTE: The values on this graph represent the loss seen by both drivers in a package
during one complete cycle. For a single driver, divide the stated values by 2. For a
single transition of a single driver, divide the stated value by 4.
2
3
4
5
6
7
8
TELCOM SEMICONDUCTOR, INC.
4-247