TC4426 Datasheet, PDF (2/6 Pages) TelCom Semiconductor, Inc – 1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS

TC4426
TC4427
TC4428
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B . (V_DD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP R_θJ-A ................................................ 150°C/W
CerDIP R_θJ-C .................................................. 50°C/W
PDIP R_θJ-A ................................................... 125°C/W
PDIP R_θJ-C ..................................................... 42°C/W
SOIC R_θJ-A ................................................... 155°C/W
SOIC R_θJ-C ..................................................... 45°C/W
PIN CONFIGURATIONS
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (T_A ≤ 70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
NC ¹
IN A 2
GND 3
IN B 4
TC4426
8 NC
7 OUT A
6 V_DD
5 OUT B
2,4
7,5
INVERTING
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
NC 1
IN A 2
GND 3
IN B 4
TC4427
8 NC
7 OUT A
6 ^VDD
5 OUT B
2,4
7,5
NONINVERTING
NC 1
IN A 2
GND 3
IN B 4
TC4428
8 NC
7 OUT A
6 VDD
5 OUT B
2
7
4
5
DIFFERENTIAL
ELECTRICAL CHARACTERISTICS: T_A = +25°C with 4.5V ≤ V_DD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ Max Unit
Input
V_IH
Logic 1 High Input Voltage
V_IL
Logic 0 Low Input Voltage
I_IN
Output
Input Current
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance
I_PK
Peak Output Current
I_REV
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
I_S
Power Supply Current
NOTE: 1. Switching times are guaranteed by design.
0V ≤ V_IN ≤ V_DD
V_DD = 18V, I_O = 10 mA
Duty Cycle ≤ 2%, t ≤ 30 µsec
Duty Cycle ≤ 2%
t ≤ 30 µsec
Figure 1
Figure 1
Figure 1
Figure 1
V_IN = 3V (Both Inputs)
V_IN = 0V (Both Inputs)
2.4
—
—
V
—
—
0.8
V
–1
—
1
µA
V_DD – 0.025 —
—
—
—
7
—
1.5
> 0.5
—
—
V
0.025 V
10
Ω
—
A
—
A
—
19
30
nsec
—
19
30
nsec
—
20
30
nsec
—
40
50
nsec
—
—
4.5
mA
—
—
0.4
mA
4-246
TELCOM SEMICONDUCTOR, INC.