TC4421 Datasheet, PDF (3/6 Pages) TelCom Semiconductor, Inc – 9A HIGH-SPEED MOSFET DRIVERS

9A HIGH-SPEED MOSFET DRIVERS
1
TC4421
TC4422
ELECTRICAL CHARACTERISTICS (cont.):
Measured over operating temperature range with 4.5V ≤ V_S ≤ 18V unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Input
V_IH
V_IL
I_IN
Output
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
0V ≤ V_IN ≤ V_DD
2.4
—
—
—
– 10
—
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance, High
R_O
Output Resistance, Low
Switching Time (Note 1)
See Figure 1
See Figure 1
V_DD = 18V, I_O = 10 mA
V_DD = 18V, I_O = 10 mA
V_DD – 0.025 —
—
—
—
2.4
—
1.8
t_R
t_F
t_D1
t_D2
Power Supply
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1, C_L = 10,000 pF
Figure 1, C_L = 10,000 pF
Figure 1
Figure 1
—
60
—
60
—
50
—
65
I_S
Power Supply Current
V_DD
Operating Input Voltage
NOTE: 1. Switching times guaranteed by design.
V_IN = 3V
V_IN = 0V
—
0.45
—
0.06
4.5
—
Max
—
0.8
10
—
0.025
3.6
2.7
120
120
80
80
3
0.2
18
2
Unit
V
V
µA
3 _V
V
W
W
nsec
nsec
nsec
4
nsec
mA
V
5
V_DD = 18V
1
8
0.1 µF
0.1 µF
0.1 µF
INPUT
2
6
7
TC4421
4
5
OUTPUT
CL = 10,000 pF
+5V
INPUT
0V
+18V
OUTPUT
0V
10% _{t D1 t F}
90%
10%
90%
t _D2
t_R
90%
10%
INPUT: 100 kHz, square wave,
t_RISE = t_FALL ≤ 10nsec
6
7
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
8
4-233