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TC4421 Datasheet, PDF (2/6 Pages) TelCom Semiconductor, Inc – 9A HIGH-SPEED MOSFET DRIVERS
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9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation, TA ≤ 70°C
PDIP ..................................................................730W
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Power Dissipation, TA ≤ 70°C
5-Pin TO-220 (With Heat Sink) .........................1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedance (To Case)
5-Pin TO-220 RQJ-C ..................................................... 10°C/W
Storage Temperature ............................ – 65°C to +150°C
Operating Temperature (Chip) ................................ 150°C
Operating Temperature (Ambient)
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Lead Temperature (10 sec) ..................................... 300°C
Supply Voltage ............................................................20V
Input Voltage .......................... (VDD + 0.3V) to (GND - 5V)
Input Current (VIN > VDD) ........................................ 50 mA
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V ≤ VDD ≤ 18V unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ Max
Input
VIH
VIL
IIN
Output
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
0V ≤ VIN ≤ VDD
2.4
1.8
—
—
1.3
0.8
– 10
—
10
VOH
High Output Voltage
VOL
Low Output Voltage
RO
Output Resistance, High
RO
Output Resistance, Low
IPK
Peak Output Current
IDC
Continuous Output Current
IREV
Latch-Up Protection
Switching Time (Note 1)
See Figure 1
See Figure 1
VDD = 18V, IO = 10 mA
VDD = 18V, IO = 10 mA
VDD = 18V
10V ≤ VDD ≤ 18V, TC = 25°
(TC4421/22 CAT only)
Duty Cycle ≤ 2%
Withstand Reverse Current
VDD – 0.025
—
—
—
—
2
—
—
—
0.025
1.4
—
0.9
1.7
9
—
>1500
—
—
t ≤ 300 µsec
tR
tF
tD1
tD2
Power Supply
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1, CL = 10,000 pF
Figure 1, CL = 10,000 pF
Figure 1
Figure 1
—
60
75
—
60
75
—
30
60
—
33
60
IS
VDD
Input
Power Supply Current
Operating Input Voltage
VIN = 3V
VIN = 0V
—
0.2
1.5
—
55
150
4.5
—
18
VIH
Logic 1 Input Voltage
VIL
Logic 0 Input Voltage
IIN
Input Current
0V ≤ VIN ≤ VDD
2.4
—
—
—
—
0.8
– 10
—
10
Unit
V
V
µA
V
V
Ω
Ω
A
A
mA
nsec
nsec
nsec
nsec
mA
µA
V
V
V
µA
4-232
TELCOM SEMICONDUCTOR, INC.
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