TC18C46-1 Datasheet, PDF (3/10 Pages) TelCom Semiconductor, Inc – CMOS CURRENT MODE PWM CONTROLLER

CMOS CURRENT MODE
PWM CONTROLLERS
1
TC18C46
TC28C46
TC38C46
ELECTRICAL CHARACTERISTICS: unless otherwise stated, these specifications apply for T_A = – 55°C to
+125°C for TC18C46; – 40°C to +85°C for the TC28C46; and 0°C to +70°C for the TC38C46; V_IN = V_DD = 16V;
R_T = 30.1k; C_T = 270pF.
2
TC18C46
TC28C46
TC38C46
Parameter
Test Conditions
Min Typ Max Min Typ Max Units
Reference Section
Output Voltage
Line Regulation
Load Regulation
Temp Coefficient
Total Output Range
Long Term Drift
Short Circuit
Output Current
Output Noise Voltage
Oscillator Section
Initial Accuracy
Voltage Coefficient
Temp Coefficient
Clock Ramp
Reset Current
Osc Ramp Amplitude
Sync Output High Level
T_f = 25°C, I_O = 1mA
V_IN = 8V to 16V
I_O = 1mA to 10mA
Over Operating Range, (Note 1)
Line, Load, and Temperature (Note 1)
T_f = 125°C, 1000 Hrs (Note 1)
V_REF = 0V
10 Hz ≤ f ≤ 10 kHz, Tf = 25°C (Note 1)
T_f = 25°C
V_IN = 8V to 16V
Over Operating Range (Note 1)
(Note 1)
Sync Output Low Level
Sync Input High Level
Sync Input Low Level
Sync Input Current
Error Amp Section
Input Offset Voltage
Input Bias Current
Input Offset Current
Open Loop Voltage Gain
Gain Bandwidth Product
CMRR
PSRR
Output Sink Current
Output Source Current
High Level Output Volt
Low Level Output Volt
Slew Rate
(Note 1)
Pin 8 = 0V, (Note 1)
Pin 8 = 0V, (Note 1)
Sync Voltage = 5.25V, Pin 8 = 0V
∆V_O = 1V to 6V, R_L = 100k
T_f = 25°C (Note 1)
V_CM = 0V to 11V
V_IN = 8V to 16V
V(EA –) = 5V, V(EA+) = 4.9V,
V(CMPTR) = 1.2V
V(EA –) = 5V, V(EA+) = 5.1V,
V(CMPTR) = 2.5V
R_L = (CMPTR) 5kΩ to GND, A_CL = 300
R_L = (CMPTR) 5kΩ to GND, A_CL = 300
5.0 5.1
5.2
5.0 5.1
5.2
V
— Ϯ4 Ϯ20 — Ϯ4 Ϯ20 mV
— Ϯ4 Ϯ20 — Ϯ4 Ϯ20 mV
3
— Ϯ0.2 Ϯ0.5 — Ϯ0.2 Ϯ0.5 mV/°C
4.97 — 5.24 4.94 — 5.26 V
— Ϯ50 —
— Ϯ50 —
mV
20 —
70
20 —
70
mA
— 22
—
— 22
—
96.5 102
— Ϯ.1
— Ϯ.04
1.2 2
106.5
2.0
Ϯ0.06
3
96.5 101
— Ϯ.1
— Ϯ.04
1.2 2
106.5
Ϯ1.5
Ϯ0.06
3
4 ^µV(rms)
kHz
%/V
%/°C
mA
3.6 3.8
4
3.6 3.8
4
V
V_DD —
—
V_DD —
—
V
5
–0.5
–0.5
——
0.5
——
0.5
V
— 8.5
—
— 8.5
—
V
— 8.5
5
— 8.5
5
V
— ±5 Ϯ50 — ±5 Ϯ50 nA
— ±5
±25
— ±5
±25
mV
— ±10 ±100 — ±0.1 ±0.5 nA
6
— ±10 ±100 — ±0.1 ±0.5 nA
70 90
—
70 90
—
dB
0.7 1
—
0.7 1
—
MHz
70 90
—
70 90
—
dB
70 90
—
70 90
—
dB
2
4
—
2
4
—
mA
7
5 10
—
5 10
—
mA
4.75 4.9
5.1 4.75 4.9
5.1
V
— 0.4
0.9
— 0.4
0.9
V
1.3 2
—
1.3 2
—
V/µsec
8
TELCOM SEMICONDUCTOR, INC.
4-103