TC1232 Datasheet, PDF (2/6 Pages) TelCom Semiconductor, Inc – MICROPROCESSOR MONITOR

MICROPROCESSOR MONITOR
TC1232
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin (With Respect to GND) – 0.3V to +5.8V
Operating Temperature Range:
TC1232C .......................................... 0°C to +70°C
TC1232E ..................................... – 40°C to + 85°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Stresses beyond those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS: T_A = T_MIN to T_MAX; V_CC = +4.5V to 5.5V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
V_CC
V_IH
V_IL
I_L
I_OH
I_OL
I_CC
V_CCTP
V_CCTP
Supply Voltage
ST and PB RST
Input High Level
ST and PB RST
Input Low Level
Input Leakage ST, TOL
Output Current RST
Current RST, RST
Operating Current
V_CC 5% Trip Point (Note 3)
V_CC 10% Trip Point (Note 3)
Note 1
V_OH = 2.4V
V_OL = 0.4V
Note 2
TOL = GND
TOL = V_CC
4.5
2.0
– 0.3
– 1.0
– 1.0
2.0
—
4.50
4.25
5.0
5.5
V
—
V_CC +0.3
V
—
+0.8
V
—
+1.0
µA
–12
—
mA
10
—
mA
50
200
µA
4.62
4.74
V
4.37
4.49
V
CAPACITANCE (Note 4): T_A = +25°C
Symbol
Parameters
C_IN
C_OUT
Input Capacitance ST, TOL
Output Capacitance RST, RST
Test Conditions
Min
Typ
Max Units
—
—
5
pF
—
—
7
pF
AC ELECTRICAL CHARACTERISTICS: T_A = T_MIN to T_MAX; V_CC = +5V to +10%, unless otherwise specified.
Symbol
Parameters
Test Conditions
Min
Typ
Max Units
t_PB
PB RST (Note 5)
t_PBD
PB RST Delay
t_RST
Reset Active Time
t_ST
ST Pulse Width
t_TD
ST Time-out Period
t_F
V_CC Fall Time (Note 4)
Figure 3
Figure 3
Figure 4
Figure 4
TD Pin = 0V
TD Pin = Open
TD Pin = V_CC
Figure 5
20
—
—
msec
1
4
20
msec
250
610
1000 msec
75
—
—
nsec
62.5
150
250
msec
250
600
1000 msec
500
1200
2000 msec
10
—
—
µsec
5-20
TELCOM SEMICONDUCTOR, INC.