ERA34-10 Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – FAST RECOVERY DIODE

FAST RECOVERY RECT IFIER
ERA34-10
1000V 0.1A
RATINGS AND CHARACTERISTIC CURVES ERA34-10
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
100 μF
specimen
0.1 IR
20μS
200μS
Trr
NOTE : IF = IR = 100 mA TO 10 mA
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
0.10
0.08
0.06
0.04
0.02
0
0 20 40 60 80 100 120 140
AMBIENT TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
1
0.1
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
2.5
2.0
1.5
1.0
0.5
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
Ta = 100 °C
1.0
0.01
Ta = 25 °C
0.001
0
1
2
3
4
5
6
7
FORWARD VOLTAGE, VOLTS
0.1
Ta = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
E-mail: [e-mail]
2 of 2
Web Site: www.taychipst.com