ERA34-10 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY DIODE

FAST RECOVERY RECT IFIER
ERA34-10
1000V 0.1A
FEATURES
! Low cost
! Diffused junction
! Low leakage
! Low forward voltage drop
! High current capability
! ^{Easily cleaned with Freon,Alcohol,Isopropanol}
and similar s olvents
! _{The plas tic m aterial carries U/L recognition 94V-0}
Mechanical Data
Case : DO-41 Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
ERA34-10
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 0.1 A
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
Typical junction capacitance (Note2)
Typical thermal resistance
(Note3)
Operating junction temperature range
Storage temperature range
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
I_R
t_rr
C_J
R_θJA
T_J
T_STG
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
1000
700
1000
0.1
10.0
1.0
5.0
100.0
150
12
55
-55----+150
-55----+150
V
V
V
A
A
V
A
ns
pF
̼ͤ
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