BYD13D Datasheet, PDF (2/3 Pages) EIC discrete Semiconductors – CONTROLLED AVALANCHE RECTIFIER DIODES

Controlled avalanche rectifiers
BYD13D THRU BYD13M
200V-1000V 0.750A-1.4A
RATINGS AND CHARACTERISTIC CURVES BYD13D THRU BYD13M
2.0
han_Id_Fb₍o_Ao_Vk, ₎halfpage
(A)
1.6
1.2
0.8
0.4
0
0
40
80
a = 1.57; V_R = V_RRMmax; δ = 0.5.
Lead length 10 mm.
120
160
200
Ttp (^oC)
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
1.0
han_Id_Fb₍o_Ao_Vk,₎halfpage
(A)
0.8
0.6
0.4
0.2
0
0
40
80
120
160
200
Tamb (^oC)
a = 1.57; V_R = V_RRMmax; δ = 0.5.
Device mounted as shown in Fig.9.
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
2.5
handbook, halfpage
P
(W)
2.0
1.5
a = 3 2.5 2
1.57
1.42
1.0
0.5
0
0
0.4
0.8
a = I_F(RMS)/I_F(AV); V_R = V_RRMmax; δ = 0.5.
1.2
1.6
IF(AV) (A)
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handboo²k,⁰h⁰alfpage
Tj
( ^oC)
150
100
D
G
J
K
M
50
0
0
400
800
1200
VR, VRRM (V)
Solid line = V_R.
Dotted line = V_RRM; δ = 0.5.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
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