BYD13D Datasheet, PDF (1/3 Pages) EIC discrete Semiconductors – CONTROLLED AVALANCHE RECTIFIER DIODES

Controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy _{absorption capability}
• Available in ammo-pack.
BYD13D THRU BYD13M
200V-1000V 0.750A-1.4A
MECHANICAL DATA
• Cavity free cylindrical glass package
• through Implotec™⁽¹⁾ technology.
• This package is hermetically sealed
and fatigue free as coefficients of
• ^{expansion of all used parts are}
matched.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
I_F(AV)
average forward current
I_FSM
E_RSM
T_stg
T_j
non-repetitive peak forward current
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
CONDITIONS
T_tp = 55 °C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs 2 and 4
T_amb = 65 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
t = 10 ms half sinewave;
T_j = T_{j max} prior to surge;
V_R = V_RRMmax
L = 120 mH; T_j = T_{j max} prior to
surge; inductive load switched off
see Fig.5
MIN.
−
MAX.
UNIT
1.40 A
−
0.75 A
−
20
A
−
7
mJ
−65 +175
°C
−65 +175
°C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_F
V_(BR)R
I_R
t_rr
C_d
forward voltage
reverse avalanche
breakdown voltage
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
reverse current
reverse recovery time
diode capacitance
I_F = 1 A; T_j = T_{j max;} see Fig.6
I_F = 1 A; see Fig.6
I_R = 0.1 mA
V_R = V_RRMmax; see Fig.7
V_R = V_RRMmax; T_j = 165 °C; see Fig.7
when switched from I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25 A; see Fig.10
V_R = 0 V; f = 1 MHz; see Fig.8
MIN.
−
−
225
450
650
900
1 100
−
−
−
−
TYP.
−
−
MAX.
0.93
1.05
UNIT
V
V
−
−
V
−
−
V
−
−
V
−
−
V
−
−
V
−
1
µA
−
100
µA
3
−
µs
21
−
pF
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