2N5551 Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Small Signal High Voltage Transistor (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
hFE*
D.C. Current Gain
ICBO
IEBO
VCE(Sat)*
Collector Cut–Off Current
Emitter Cut–Off Current
Collector Emitter Saturation Voltage
VBE(Sat)* Base Emitter Saturation Voltage
VCBO
VCEO
VEBO
ft
Cob
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Transition Frequency
Output Capacitance
Min.
80
80
50
-
-
-
-
-
180
160
6.0
100
-
Max.
-
400
-
50
50
0.15
0.2
1.0
1.0
-
-
-
300
6.0
Unit
nA
nA
V
V
V
V
V
MHz
pF
*Pulse Test: Pulse Width=300µs, Duty Cycle=2%
2N5551
Conditions
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCB=120V, IE=0
VEB=4V, IC=0
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCE=10V, IC=10mA,
f=100MHz
VCB=10V, f=1.0MHz,
IE=0
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Rev. A/AH 2007-11-09
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