2N5551 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Small Signal High Voltage
Transistor (NPN)
2N5551
Small Signal High Voltage Transistor (NPN)
Features
• High Voltage NPN Transistor for General Purpose and
Telephony Applications
Mechanical Data
Case:
Terminals:
Weight:
TO-92, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.18 gram
TO-92
Maximum Ratings (T _Ambient=25ºC unless noted otherwise)
Symbol
Description
2N5551
VCBO
Collector-Base Voltage
180
VCEO
Collector-Emitter Voltage
160
VEBO
Emitter-Base Voltage
6.0
IC
Collector Current Continuous
600
PD
Power Dissipation at Ta=25°C
Derate above 25°C
625
5.0
RθJC
Junction to Case
125
RθJA
Junction to Ambient
TJ ,TSTG Operation and Storage Junction Temperature Range
357
-55 to +150
Unit
V
V
V
mA
mW
mW/° C
Conditions
° C/W
°C
Measured with the device
soldered into a typical
printed circuit board
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Rev. A/AH 2007-11-09
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