2N5089 Datasheet, PDF (2/4 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

NPN Small Signal General Purpose Transistors
Electrical Characteristics (T _Ambient=25ºC unless noted otherwise)
2N5089
Symbol Description
V (BR)CEO Collector-Base Breakdown Voltage
V (BR) CBO Collector-Emitter Breakdown Voltage
ICBO
Collector Cut-Off Current
IEBO
Emitter Cut-Off Current
hFE
DC Current Gain
VCE(sat)
VBE(on)
fT
Cc
Ce
hfe
NF
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
transition frequency
Collector-Base Capacitance
Emmiter-Base Capacitance
Small-Signal Current Gain
Noise Figure
MIN
25
30
--
--
400
450
400
--
50
--
--
450
--
MAX
--
--
50
100
1200
--
--
0.5
0.8
--
4.0
10
1800
2.0
Unit Conditions
V Open Emitter
V Open Base
nA IE = 0; VCB =20V
nA IC = 0; VEB = 4.5 V
IC = 100 µA; VCE = 5 V
IC = 1 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
V IC = 10 mA; IB =1mA
V IC = 10 mA; VCE =5V
MHz
IC = 500 µA; VCE = 5 V;
f = 20 MHz
pF IE= 0; VCB =5V; f=100KHz
pF IC= 0; VCB =5V; f=100KHz
IC = 1.0 mA, VCE = 5 V,
f = 1.0 kHz
dB
IC = 100 µA, VCE = 5.0 V,
RS=10 kΩ, f=10 Hz to 15.7 Hz
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