2N5089 Datasheet, PDF (1/4 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

SMALL SIGNAL GENERAL
PURPOSE TRANSISTORS
2N5089
NPN Epitaxial Silicon Transistors
Features
• Application for Amplifier Circuit, Switching Circuit, Inverter
• RoHS Compliant
Maximum Ratings (T _Ambient=25ºC unless noted otherwise)
Symbol
Description
V CEO
Collector-Base Voltage
V CBO
Collector-Emitter Voltage
V EBO
Emitter-Base Voltage
IC
Collector Current - Continuous
PD
Collector Power Dissipation
TJ,TSTG Operating Junction and Storage
Value
25
30
4.5
50
625
5.0
-55 to 150
Unit
Conditions
V
Open Emitter
V
Open Base
V
Open Collector
mA
mW
mW/° C
°C
Derating above 25 ºC
Thermal Characteristics
Symbol
Description
Rth (j-a) Thermal Resistance from Junction to Amber
Rth (j-c) Thermal Resistance from Junction to Case
Value
357
125
Unit
° C/W
° C/W
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