THN5602F Datasheet, PDF (3/6 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5602F
DC CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
BVCBO
BVCEO
BVEBO
IS
hFE
Cc
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
CONDITION
open emitte
open base
open collector
MIN.
20
8
3
0.1
60
MAX.
200
4.5
UNIT
V
V
V
mA
pF
Fig 1. DC Current gain v.s collector current
Fig 2. Collector-base capacitance v.s collector-
base voltage(DC)
www.tachyonics.co.kr