THN5602F Datasheet, PDF (1/6 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5602F
NPN SiGe RF POWER
TRANSISTOR
The THN5602F is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-89 SMD package.
an output device, depending on the specific app-
lication.
FEATURES
o 4.8 Volt operation
o P1dB 28 dBm @f=465MHz
o Power gain 10 dB @f=465MHz
APPLICATIONS
o Hand-held radio equipment in common
emitter class-AB operation in 450 MHz
communication band.
PIN CONFIGURATION
PIN NO SYMBOL
1
b
2
c
3
e
4
c
DESCRIPTION
base
collector
emitter
collector
MAXIMUM RATINGS
SYMBOL
VCBO
VCEO
VEBO
Ic
PT
TSTG
TJ
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Juction Temperature
CONDITION
Open Emitter
Open Base
Open Collector
Ts = 60 ; note 1
VALUE
20
8
4
350
1
-65 ~ 150
150
UNIT
V
V
V
mA
W
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