THN6201 Datasheet, PDF (2/13 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

THN6201 series
□ Electrical Characteristics ( T_A = 25 ℃ )
Symbol
Parameter
I_{CBO Collector Cut-off Current}
I_CEO
I_{EBO Emitter Cut-off Current}
Test Condition
V_CB = 19 V, I_E = 0 mA
V_CE = 12 V, I_B = 0 mA
V_EB = 1 V, I_C = 0 mA
Value
Min. Typ. Max. ^Unit
-
- 0.5 uA
-
-
5 uA
-
- 0.5 uA
h_{FE DC Current Gain}
V_CE = 3 V, I_C = 15 mA
f_T
Transition Frequency
V_CE = 3 V, I_C = 15 mA
C_{CB Collector to Base Capacitance} V_CB = 10 V, f = 1 MHz
80 200 300
- 12 - GHz
- 0.47 - pF
|S₂₁|² Insertion Power Gain
V_CE = 3 V, I_C = 5 mA, f = 1 GHz 11.5 13.5 -
V_CE = 3 V, I_C = 15 mA, f = 1 GHz 13 15 -
dB
V_CE = 3 V, I_C = 5 mA, f = 2 GHz
68
-
V_CE = 3 V, I_C = 15 mA, f = 2 GHz 7.5 9.5 -
MAG Maximum Available Gain
V_CE = 3 V, I_C = 5 mA, f = 1 GHz 15 17 -
V_CE = 3 V, I_C = 15 mA, f = 1 GHz 16.5 18.5 -
dB
V_CE = 3 V, I_C = 5 mA, f = 2 GHz 10 12 -
NFmin Minimum Noise Figure
rn Noise Resistance
V_CE = 3 V, I_C = 15 mA, f = 2 GHz 11 13 -
V_CE = 3 V, I_C = 5 mA, f = 1 GHz
V_CE = 3 V, I_C = 5 mA, f = 2 GHz
- 1.1 -
dB
- 1.5 -
V_CE = 3 V, I_C = 5 mA, f = 1 GHz
- 0.12 -
Ω
V_CE = 3 V, I_C = 5 mA, f = 2 GHz
- 0.06 -
G_A Associated Gain
V_CE = 3 V, I_C = 5 mA, f = 1 GHz 12.5 14.5 -
V_CE = 3 V, I_C = 15 mA, f = 1 GHz 14 16 -
dB
V_CE = 3 V, I_C = 5 mA, f = 2 GHz
8 10
-
V_CE = 3 V, I_C = 15 mA, f = 2 GHz 9 11
V_CE = 3 V, I_C = 15 mA, f = 1 GHz
P_{1dB, IN} Input 1dB Compression Point
- 10
(Z_S = Z_Sopt, Z_L = Z_Lopt)
-
- dBm
www.tachyonics.co.kr
- 2/13 -
Aug.-2005
Rev 2.0