THN6201 Datasheet, PDF (1/13 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

NPN SiGe RF TRANSISTOR
□ Applications
LNA and wide band amplifier up to GHz range
THN6201 series
SOT 523
Unit in mm
□ Features
o Low Noise Figure
NF = 1.1 dB Typ. @ f = 1 GHz, V_CE = 3 V, I_C = 5 mA
NF = 1.5 dB Typ. @ f = 2 GHz, V_CE = 3 V, I_C = 5 mA
o High Power Gain
MAG = 18.5 dB Typ. @ f = 1 GHz, V_CE = 3 V, I_C = 15 mA
13 dB Typ. @ f = 2 GHz, V_CE = 3 V, I_C = 15 mA
o High Transition Frequency
f_T = 12 GHz Typ. @ V_CE = 3 V, I_C = 15 mA
□ h_FE Classification
Marking AC1
h_FE Value 125 to 300
AC2
80 to 160
□ Absolute Maximum Ratings
Pin Configuration
Pin No
Symbol
1
B
2
E
3
C
Description
Base
Emitter
Collector
□ Available Package ^{Unit : mm}
Product Package Dimension
THN6201S SOT23 2.9ⅹ1.3, 1.2t
THN6201U SOT323 2.0ⅹ1.25, 1.0t
THN6201Z SOT343 2.0ⅹ1.25, 1.0t
THN6201E SOT523 1.6ⅹ0.8, 0.8t
THN6201KF SOT623F 1.4ⅹ0.8, 0.6t
Symbol
Parameter
V_CBO
Collector to Base Breakdown Voltage
V_CEO
Collector to Emitter Breakdown Voltage
V_EBO
Emitter to Base Breakdown Voltage
I_C
Collector Current (DC)
P_T
Total Power Dissipation
T_STG
Storage Temperature
T_J
Operating Junction Temperature
Caution : ESD sensitive device
Ratings
Unit
20
V
12
V
2.5
V
35
mA
150
mW
-65 ~ 150
℃
150
℃
www.tachyonics.co.kr
- 1/13 -
Aug.-2005
Rev 2.0