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SPP3413 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET | |||
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SPP3413
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25â Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
IDSS VDS=-20V,VGS=0V
TJ=55â
ID(on) VDSâ¦-5V,VGS=-4.5V
RDS(on)
gfs
VGS=-4.5V,ID=-3.4A
VGS=-2.5V,ID=-2.4A
VGS=-1.8V,ID=-1.7A
VGS=-1.25V,ID=-1.0A
VDS=-5V,ID=-2.8A
VSD IS=-1.5A,VGS=0V
-20
-0.35
V
-0.8
±100 nA
-1
uA
-5
-6
A
0.076 0.095
0.097 0.120 â¦
0.123 0.145
0.185 0.210
6
S
-0.8 -1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=-6V,VGS=-4.5V
IDâ¡-2.8A
VDS=-6V,VGS=0V
f=1MHz
VDD=-6V,RL=6â¦
IDâ¡-1.0A,VGEN=-4.5V
RG=6â¦
4.8
8
1.0
nC
1.0
485
85
pF
40
10
16
13
23
ns
18
25
15
20
2006/04/12 Ver.4
Page 3
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