SPP3413 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – P-Channel Enhancement Mode MOSFET

SPP3413
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP3413 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
‹ -20V/-3.4A,RDS(ON)= 95mΩ@VGS=-4.5V
‹ -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V
‹ -20V/-1.7A,RDS(ON)=145mΩ@VGS=-1.8V
‹ -20V/-1.0A,RDS(ON)=210mΩ@VGS=-1.25V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-3L package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2006/04/12 Ver.4
Page 1