SPN8878B Datasheet, PDF (3/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN8878B
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=24V,VGS=0V
IDSS _{VDS=24V,VGS=0V}
TJ=55℃
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=20A
VGS=4.5V,ID=15A
gfs VDS=15V,ID=20A
VSD IS=40A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=10V
ID= 50A
VDS=15VGS=0V
f=1MHz
VDD=15V,RL=0.3Ω
ID≡50A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
30
V
0.6
1.8
±100 nA
1
uA
5
40
A
0.012 0.014
0.015 0.019
Ω
15
S
0.8 1.5 V
10
18
2.8
nC
2.0
850
158
pF
120
10
15
4
12
nS
15
30
10
15
2011/09/27 Ver.5
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