SPN8878B Datasheet, PDF (1/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN8878B
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8878B is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. The
SPN8878B has been designed specifically to improve the
overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON)
and fast switching speed.
APPLICATIONS
z Power Management in Note book
z Powered System
z DC/DC Converter
z Load Switch
FEATURES
‹ 30V/20A,RDS(ON)= 14mΩ@VGS=10V
‹ 30V/15A,RDS(ON)= 19mΩ@VGS=4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ TO-252 and TO-251 package design
PIN CONFIGURATION
TO-252
TO-251
PART MARKING
TO-252
TO-251
2011/09/27 Ver.5
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