SPN8822 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – Common-Drain Dual N-Channel Enhancement Mode MOSFET

SPN8822
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V
IDSS _{VDS=20V,VGS=0V}
TJ=55℃
ID(on) VDS≥5V,VGS=4.5V
RDS(on)
gfs
VGS= 4.5V,ID=8.0A
VGS= 2.5V,ID=7.0A
VGS= 1.8V,ID=3.0A
VDS=15V,ID=5.0A
VSD IS=1.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V
ID≡5.0A
VDS=10V,VGS=0V
f=1MHz
VDD=10V,RL=10Ω
ID≡1.0A,VGEN=4.5V
RG=6Ω
Min. Typ Max. Unit
20
V
0.4
1.0
±100 nA
1
uA
10
6
A
0.020 0.024
0.024 0.032 Ω
0.032 0.042
30
S
0.8 1.2 V
10
13
1.4
nC
2.1
600
120
pF
100
15
25
40
60
ns
45
65
30
40
2007/04/23 Ver.1
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