SPN8822 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – Common-Drain Dual N-Channel Enhancement Mode MOSFET

SPN8822
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION
The SPN8822 is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application ,
notebook computer power management and other battery
powered circuits where high-side switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ 20V/8.0A,RDS(ON)= 24mΩ@VGS= 4.5V
‹ 20V/7.0A,RDS(ON)= 32mΩ@VGS= 2.5V
‹ 20V/3.0A,RDS(ON)= 42mΩ@VGS= 1.8V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ TSSOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2007/04/23 Ver.1
Page 1