SPN8668 Datasheet, PDF (3/7 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN8668
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS = 0V , ID =250uA
VGS(th) VDS = VGS,IDS =25uA
60
V
1.2 1.8 2.2
IGSS
IDSS
RDS(on)
VDS = 0V,VGS = ±20 V
VDS = 60V,VGS =0V,
TJ = 25°C
VDS = 48V,VGS =0V,
TJ = 125°C
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 8A
±100 nA
1
uA
10
17
21
20
24 ^mΩ
gfs VDS = 10V, ID =10 A
9
S
VSD IF = 1A,VGS = 0V
1
V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 30V,VGS = 10V,
ID =15A
VGS = 0V, VDS = 20V,
F=1MHz
(VDD = 30V,ID = -1A,
VGEN=10V,RG = 6Ω)
28
42
3.5
7 nC
6.5
10
1680 2440
115 170 pF
85 125
7.2
14
38
72
ns
34
65
8.2
16
2016/5/2 V0.1
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