SPN8668 Datasheet, PDF (1/7 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN8668
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8668 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application, notebook computer power management and
other battery powered circuits where high efficiency and
fast switching is required.
FEATURES
 60V/33A,RDS(ON)=21mΩ@VGS=10V
 60V/8A,RDS(ON)=24mΩ@VGS=4.5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC current
capability
 PPAK3X3 package design
APPLICATIONS
 Motor Drive
 Power Tools
 LED Lighting
PIN CONFIGURATION(PPAK3X3)
PART MARKING
2016/5/2 V0.1
Page 1