SPN80T06 Datasheet, PDF (3/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN80T06
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
IDSS
RDS(on)
VDS=60V, VGS=0V
VDS=48V, VGS=0V
TJ = 150 °C
VGS= 10V,ID=30A
VGS= 5V,ID=20A
VSD IS=1A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V, VGS=10V
ID = 30A
VDS=30V, VGS=0V
f=1MHz
VDD=30V, RL=1Ω
VGEN=10V, RG=3Ω
Min. Typ Max. Unit
60
V
1.0
3.0
±100 nA
10
100 ^uA
6.5
8
mΩ
8.5
10
1.0 V
76
17
nC
19
3500
319
pF
236
18
35
nS
44
23
2014/03/19 V.1
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