SPN80T06 Datasheet, PDF (1/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN80T06
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN80T06 is the N-Channel enhancement mode
power field effect transistor which is produced using high
cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suitable for
synchronous rectifier application, notebook computer
power management and other battery powered circuits.
APPLICATIONS
 DC/DC Converter
 Load Switch
 SMPS Secondary Side Synchronous Rectifier
FEATURES
 60V/80A, RDS(ON)= 8mΩ@VGS= 10V
RDS(ON)= 10mΩ@VGS= 5V
 Super high density cell design for extremely low
RDS (ON)
 Exceptional on-resistance and maximum DC
current capability
 TO-220-3L/TO-263-2L/TO-262-3L package
design
PIN CONFIGURATION
TO-220-3L TO-263-2L
TO-262-3L
PART MARKING
TO-220-3L TO-263-2L
TO-262-3L
2014/03/19 V.1
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