SPN65T10 Datasheet, PDF (3/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN65T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS
IDSS
RDS(on)
VDS=0V,VGS=±20V
VDS=100V,VGS=0V
VDS=80V,VGS=0V
TJ = 150 °C
VGS= 10V,ID=45A
VSD IS=45A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=80V,VGS=4.5V
ID= 30A
VDS=25VGS=0V
f=1MHz
VDD=50V,RL=1.6Ω
ID≡30A,VGEN=10V
RG=10Ω
Min. Typ Max. Unit
100
V
2.0
4.0
±100 nA
10
uA
100
14 mΩ
1.3 V
57
12
nC
17.5
2920
261
pF
162
15
13
nS
55
21
2013/04/18 Ver.1
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