SPN65T10 Datasheet, PDF (1/9 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN65T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN65T10 is the N-Channel enhancement mode
power field effect transistor which is produced using high
cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suitable for
synchronous rectifier application, notebook computer
power management and other battery powered circuits.
APPLICATIONS
DC/DC Converter
Load Switch
SMPS Secondary Side Synchronous Rectifier
FEATURES
100V/68A, RDS(ON)= 14mΩ@VGS= 10V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-220-3L/TO-263-2L/TO-262-3L package
design
PIN CONFIGURATION
TO-220-3L TO-263-2L
TO-262-3L
PART MARKING
TO-220-3L TO-263-2L
TO-262-3L
2013/04/18 Ver.1
Page 1