SPN4910 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN4910
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=40V,VGS=0V
IDSS _{VDS=40V,VGS=0V}
TJ=85℃
ID(on) VDS= 5V,VGS =4.5V
RDS(on)
gfs
VGS= 10V,ID=10A
VGS=4.5V,ID= 8A
VGS=2.5V,ID= 6A
VDS=15V,ID=6.2A
VSD IS=2.3A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=20V,VGS=4.5V
ID= 5A
VDS=20V,VGS=0V
f=1MHz
VDD=20V,RL=4Ω
ID≡5.0A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
40
V
0.5
1.0
±100 nA
1
uA
10
10
A
0.014 0.020
0.017 0.024 Ω
0.024 0.030
13
S
0.8 1.2 V
10
14
2.8
nC
3.2
850
110
pF
75
6
12
10
20
nS
20
36
6
12
2009/07/28 Ver.1
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