SPN4910 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – N-Channel Enhancement Mode MOSFET

SPN4910
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4910 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
FEATURES
‹ N-Channel
40V/10A,RDS(ON)= 20mΩ@VGS= 10V
40V/ 8A,RDS(ON)= 24mΩ@VGS= 4.5V
40V/ 6A,RDS(ON)= 30mΩ@VGS= 2.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2009/07/28 Ver.1
Page 1