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| VN0635 Datasheet, PDF (2/4 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs | |||
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Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
TO-92
0.25A
* ID (continuous) is limited by max rated Tj.
1.5A
Power Dissipation
@ TC = 25°C
1W
θjc
°C/W
125
θja
°C/W
170
VN0635/VN0640
IDR*
0.25A
IDRM
1.5A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
âVGS(th)
IGSS
IDSS
Parameter
Min Typ Max
Drain-to-Source
Breakdown Voltage
VN0640 400
VN0635 350
Gate Threshold Voltage
1.0
4.0
Change in VGS(th) with Temperature
-4.0
Gate Body Leakage
100
Zero Gate Voltage Drain Current
10
1
ID(ON)
ON-State Drain Current
0.6
0.75
RDS(ON)
Static Drain-to-Source
ON-State Resistance
8.0
8.0
10
âRDS(ON)
Change in RDS(ON) with Temperature
0.75
GFS
Forward Transconductance
100 160
CISS
Input Capacitance
105
130
COSS
Common Source Output Capacitance
25
75
CRSS
Reverse Transfer Capacitance
10
20
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
10
td(OFF)
Turn-OFF Delay Time
20
tf
Fall Time
10
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
300
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Unit
V
V
mV/°C
nA
µA
mA
A
â¦
%/°C
m
pF
ns
V
ns
Conditions
VGS = 0V, ID = 2mA
VGS = VDS , ID = 2mA
VGS = VDS , ID = 2mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 5V, ID = 100mA
VGS = 10V, ID = 500mA
VGS = 10V, ID = 500mA
VDS = 25V, ID = 500mA
VGS = 0V, VDS = 25V
f = 1 MHz
VDD = 25V,
ID = 0.5A,
RGEN = 25â¦
VGS = 0V, ISD = 0.5A
VGS = 0V, ISD = 0.5A
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
7-172
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