VN0635 Datasheet, PDF (1/4 Pages) Supertex, Inc – N-Channel Enhancement-Mode Vertical DMOS FETs

VN0635
VN0640
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV_DSS /
BV_DGS
350V
400V
† _{MIL visual screening available}
R_DS(ON)
(max)
10Ω
10Ω
Features
s Free from secondary breakdown
s Low power drive requirement
s Ease of paralleling
s Low C_ISS and fast switching speeds
s Excellent thermal stability
s Integral Source-Drain diode
s High input impedance and high gain
s Complementary N- and P-channel devices
I_D(ON)
(min)
0.75A
0.75A
Applications
s Motor controls
s Converters
s Amplifiers
s Switches
s Power supply circuits
s Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
BV_DSS
BV_DGS
± 20V
-55°C to +150°C
300°C
Order Number / Package
TO-92
Die^†
VN0635N3 VN0635ND
VN0640N3 VN0640ND
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
SGD
TO-92
Note: See Package Outline section for dimensions.
7-171