LP0701 Datasheet, PDF (2/4 Pages) Supertex, Inc – P-Channel Enhancement-Mode Lateral MOSFET

Thermal Characteristics
Package
I_D (continuous)*
I_D (pulsed)*
TO-92
-0.5A
SO-8
-0.7A
* I_D (continuous) is limited by max rated T_j.
† _{Mounted on FR4 board, 25mm x 25mm x 1.57mm.}
-1.25A
-1.25A
Power Dissipation
@ T_C = 25°C
1W
1.5W^†
θ_jc
°C/W
125
83
θ_ja
°C/W
170
104^†
LP0701
I_DR
-0.5A
-0.7A
I_DRM*
-1.25A
-1.25A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
BV_DSS
V_GS(th)
∆V_GS(th)
I_GSS
I_DSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V_GS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
-16.5
-0.5
V
-0.7 -1.0
V
-4.0 mV/°C
-100
nA
-100
nA
-1.0
mA
I_D(ON)
ON-State Drain Current
-0.4
A
-0.6 -1.0
-1.25 -2.3
A
R_DS(ON)
Static Drain-to-Source
ON-State Resistance
2.0
4.0
Ω
1.7
2.0
1.3
1.5
∆R_DS(ON) Change in R_DS(ON) with temperature
0.75 %/°C
G_FS
Forward Transconductance
500 700
m
C_ISS
Input Capacitance
120 250
C_OSS
Common Source Output Capacitance
100 125
pF
C_RSS
Reverse Transfer Capacitance
40
60
t_d(ON)
t_r
Turn-ON Delay Time
Rise Time
20
ns
20
t_d(OFF)
Turn-OFF Delay Time
30
t_f
Fall Time
30
V_SD
Diode Forward Voltage Drop
-1.2 -1.5
V
Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
Note 2: All A.C. parameters sample tested.
Conditions
V_GS = 0V, I_D = -1mA
V_GS = V_DS, I_D = -1mA
V_GS = V_DS, I_D = -1mA
V_GS = ±10V, V_DS = 0V
V_DS = -15V, V_GS = 0V
V_DS = 0.8 Max Rating,
V_GS = 0V, TA = 125°C
V_GS = V_DS = -2V
V_GS = V_DS = -3V
V_GS = V_DS = -5V
V_GS = -2V, I_D = -50mA
V_GS = -3V, I_D = -150mA
V_GS = -5V, I_D = -300mA
V_GS = -5V, I_D = -300mA
V_DS = -15V, I_D = -1A
V_GS = 0V, V_DS = -15V, f = 1MHz
V_DD =-15V, I_D = -1.25A,
R_GEN = 25Ω
V_GS = 0V, I_SD = -500mA
Switching Waveforms and Test Circuit
0V
INPUT
-10V
0V
OUTPUT
V_DD
10%
t_(ON)
t_d(ON)
t_r
90%
t_(OFF)
t_d(OFF)
t_F
90%
90%
10%
10%
7-24
PULSE
GENERATOR
R_gen
INPUT
D.U.T.
OUTPUT
R_L
V_DD