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GN2470_08 Datasheet, PDF (2/5 Pages) Supertex, Inc – Insulated Gate Bipolar Transistor
◁
GN2470 IGBT
Thermal Characteristics
Package
IC
(continuous)
IC
(pulsed)
TO-252
1.0A
3.5A
Notes:
† Mounted on FR4 board, 25mm x 25mm x 1.57mm
Power Dissipation
@TA = 25OC
2.5W
θjc
(OC/W)
10
θja
(OC/W)
60†
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units
BVCES Collector-to-emitter breakdown voltage
700
-
-
V
BVECS Emitter-to-collector breakdown voltage
-6.0 -10
-
V
VGE(th) Gate threshold voltage
1.5
-
3.5
V
VCE Collector-to-emitter voltage drop
-
4.5
5.0
V
gfe
Forward transconductance
0.5 0.8
-
mho
ICES Zero gate voltage collector current
-
-
100
µA
IGES Gate-to-emitter leakage current
-
-
±100
nA
IC(ON) On-state collector current
3.0 4.0
-
A
td(ON) Turn-on delay time
-
8.0
15
tr
td(OFF)
Rise time
Turn-off delay time
-
400 600
ns
-
20
50
tf
Fall time
-
7000 12000
CISS Input capacitance
-
100 150
COSS Output capacitance
-
12
25
pF
CRSS Reverse transfer capacitance
-
2
5
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
VCE = VGE, IC = 1.0mA
IC = 3.0A, VGE = 13V
VCE = 25V, IC = 2.0A
VGE = 0V, VCE = 600V
VGE = ±20V, VCE = 0V
VGE = 10V, VCE = 25V
VCC = 25V
RGEN = 25Ω
RL = 11Ω
VCE = 25V
VGE = 0V
f = 1MHz
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
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